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hexfet ? power mosfet s d g absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rati ngs only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratin gs are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ description specifically designed for automotive applications, this hexfet? power mosfet utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating. these features combine to make this design an extremely efficient and reliable device for use in automotive applications and wide variety of other applications. features ? advanced process technology ? new ultra low on-resistance ? 175c operating temperature ? fast switching ? repetitive avalanche allowed up to tjmax ? lead-free, rohs compliant ? automotive qualified * applications ? electric power steering (eps) ? battery switch ? start/stop micro hybrid ? heavy loads ? dc-dc applications gds gate drain source 1 www.irf.com ? 2013 international rectifier april 30, 2013 AUIRFB8405 automotive grade to-220ab AUIRFB8405 s d g d base part number package type standard pack orderable part number form quantity AUIRFB8405 to-220 tube 50 AUIRFB8405 v dss 40v r ds ( on ) t yp .2.1m max. 2.5m i d (silicon limited) 185a ? i d (package limited) 120a symbol parameter units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current ? p d @t c = 25c maximum power dissipation w linear derating factor w/c v gs gate-to-source voltage v t j operating junction and t stg storage temperature range soldering temperature, for 10 seconds (1.6mm from case) mounting torque, 6-32 or m3 screw a 300 -55 to + 175 20 1.1 max. 185 ? 131 ? 904 120 163 10lbf ? in (1.1n ? m) c
www.irf.com ? 2013 international rectifier april 30, 2013 2 AUIRFB8405 avalanche characteristics e as (thermally limited) single pulse avalanche energy ? e as ( tested ) single pulse avalanche energy tested value ? i ar avalanche current ?? a e ar repetitive avalanche energy ? mj thermal resistance symbol parameter typ. max. units r jc junction-to-case ?? ??? 0.92 r cs case-to-sink, flat, greased surface 0.50 ??? c/w r ja junction-to-ambient ??? 62 mj 181 see fig. 14, 15, 24a, 24b 247 static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units v ( br ) dss drain-to-source breakdown voltage 40 ??? ??? v v (br)dss / t j breakdown voltage temp. coefficient ??? 0.026 ??? v/c r ds(on) static drain-to-source on-resistance ??? 2.1 2.5 v gs( th) gate threshold voltage 2.2 3.0 3.9 v i dss drain-to-source leakage current ??? ??? 1.0 ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 r g internal gate resistance ??? 2.3 ??? dynamic @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units gfs forward transconductance 100 ??? ??? s q g total gate charge ??? 107 161 q gs gate-to-source charge ??? 29 ??? q gd gate-to-drain ("miller") charge ??? 39 ??? q s y nc total gate charge sync. (q g - q g d ) ??? 68 ??? t d ( on ) turn-on delay time ??? 14 ??? t r rise time ??? 128 ??? t d(off) turn-off delay time ??? 55 ??? t f fall time ??? 77 ??? c iss input capacitance ??? 5193 ??? c oss output capacitance ??? 754 ??? c rss reverse transfer capacitance ??? 519 ??? c oss eff. (er) effective output capacitance (energy related) ??? 878 ??? c oss eff. (tr) effective output capacitance (time related) ??? 1225 ??? v dd = 26v i d = 100a, v ds =0v, v gs = 10v v gs = 0v, v ds = 0v to 32v ? conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1.0ma ? v gs = 10v, i d = 100a ? v ds = v gs , i d = 100 a v ds = 40v, v gs = 0v v ds =20v v gs = 10v ? v gs = 0v v ds = 25v ? = 1.0 mhz, see fig. 5 v gs = 0v, v ds = 0v to 32v ? , see fig. 11 i d = 100a r g = 2.7 v gs = 10v ? conditions v ds = 10v, i d = 100a i d = 100a v gs = 20v v gs = -20v v ds = 40v, v gs = 0v, t j = 125c m a na nc ns pf
www.irf.com ? 2013 international rectifier april 30, 2013 3 AUIRFB8405 notes: ? calculated continuous current based on maximum allowable junction temperature. bond wire current limit is 120a. note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (refer to an-1140) ? repetitive rating; pulse width limited by max. junction temperature. ? limited by t jmax , starting t j = 25c, l = 0.036mh, r g = 50 , i as = 100a, v gs =10v. part not recommended for use above this value. ? i sd 100a, di/dt 1295a/ s, v dd v (br)dss , t j 175c. ? pulse width 400 s; duty cycle 2%. ? c oss eff. (tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . ? c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 to 80% v dss . ? r is measured at t j approximately 90c. ? r jc value shown is at time zero. s d g diode characteristics symbol parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) ?? v sd diode forward voltage ??? 0.9 1.3 v dv/dt peak diode recovery ? ??? 1.7 ??? v/ns t rr reverse recovery time ??? 44 ??? t j = 25c v r = 34v, ??? 45 ??? t j = 125c i f = 100a q rr reverse recovery charge ??? 44 ??? t j = 25c di/dt = 100a/ s ? ??? 46 ??? t j = 125c i rrm reverse recovery current ??? 1.9 ??? a t j = 25c t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) t j = 175c, i s = 100a, v ds = 40v t j = 25c, i s = 100a, v gs = 0v ? integral reverse p-n junction diode. mosfet symbol showing the conditions ns nc a ??? ??? ??? ??? 185 ? 904
www.irf.com ? 2013 international rectifier april 30, 2013 4 AUIRFB8405 fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 60 s pulse width tj = 25c 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v 60 s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 2 3 4 5 6 7 8 9 v gs , gate-to-source voltage (v) 1.0 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 10v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 100a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 20 40 60 80 100 120 140 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 32v v ds = 20v i d = 100a
www.irf.com ? 2013 international rectifier april 30, 2013 5 AUIRFB8405 fig 8. maximum safe operating area fig 10. drain-to-source breakdown voltage fig 7. typical source-drain diode forward voltage fig 11. typical c oss stored energy fig 9. maximum drain current vs. case temperature fig 12. maximum avalanche energy vs. draincurrent 0.2 0.6 1.0 1.4 1.8 2.2 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , temperature ( c ) 40 42 44 46 48 50 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 1.0ma -5 0 5 10 15 20 25 30 35 40 45 v ds, drain-to-source voltage (v) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 e n e r g y ( j ) 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 500 600 700 800 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 17a 36a bottom 100a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 10msec 1msec operation in this area limited by r ds (on) 100 sec dc limited by package 25 50 75 100 125 150 175 t c , case temperature (c) 0 50 100 150 200 i d , d r a i n c u r r e n t ( a ) limited by package
www.irf.com ? 2013 international rectifier april 30, 2013 6 AUIRFB8405 fig 13. maximum effective transient thermal impedance, junction-to-case fig 14. typical avalanche current vs.pulsewidth fig 15. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 14, 15 (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 24a, 24b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 14, 15). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figures 13) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 20 40 60 80 100 120 140 160 180 200 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 100a 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? j = 25c and tstart = 150c. 0.01 allowed avalanche current vs avalanche pulsewidth, tav, assuming tj = 150c and tstart =25c (single pulse)
www.irf.com ? 2013 international rectifier april 30, 2013 7 AUIRFB8405 fig. 18 - typical recovery current vs. di f /dt fig 17. threshold voltage vs. temperature fig. 19 - typical stored charge vs. di f /dt fig. 20 - typical recovery current vs. di f /dt fig. 21 - typical stored charge vs. di f /dt fig 16. on-resistance vs. gate voltage -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 100 a i d = 1.0ma i d = 1.0a 0 200 400 600 800 1000 di f /dt (a/ s) 0 2 4 6 8 10 i r r m ( a ) i f = 60a v r = 34v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/ s) 0 2 4 6 8 10 12 i r r m ( a ) i f = 100a v r = 34v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/ s) 0 50 100 150 200 q r r ( n c ) i f = 100a v r = 34v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/ s) 0 50 100 150 200 q r r ( n c ) i f = 60a v r = 34v t j = 25c t j = 125c 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0.0 2.0 4.0 6.0 8.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 100a t j = 25c t j = 125c
www.irf.com ? 2013 international rectifier april 30, 2013 8 AUIRFB8405 fig 22. typical on-resistance vs. drain current 0 100 200 300 400 500 i d , drain current (a) 0 10 20 30 40 50 60 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) v gs = 5.5v v gs = 6.0v v gs = 7.0v v gs = 8.0v v gs =10v
www.irf.com ? 2013 international rectifier april 30, 2013 9 AUIRFB8405 fig 25a. switching time test circuit fig 25b. switching time waveforms fig 24b. unclamped inductive waveforms fig 24a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 26a. gate charge test circuit fig 26b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 23. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets circuit layout considerations ? low stray inductance ? ground plane ? low leakage inductance current transformer p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period * v gs = 5v for logic level devices * + - + + + - - - ? ? ? r g v dd ? dv/dt controlled by r g ? driver same type as d.u.t. ? i sd controlled by duty factor "d" ? d.u.t. - device under test d.u.t ? inductor current d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - v ds 90% 10% v gs t d(on) t r t d(off) t f v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10v + - v dd v gs
www.irf.com ? 2013 international rectifier april 30, 2013 10 AUIRFB8405 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-220ab part marking information to-220ab package outline dimensions are shown in millimeters (inches) to-220ab packages are not recommended for surface mount application. lot code ywwa xx or xx part number ir logo AUIRFB8405 date code y= year ww= work week a= automotive, lead free
www.irf.com ? 2013 international rectifier april 30, 2013 11 AUIRFB8405 ? qualification standards can be found at international rectifier?s web site: http//www.irf.com/ ?? highest passing voltage. qualification information ? to-220 n/a rohs compliant yes esd machine model class m3 (+/- 400v) ?? aec-q101-002 human body model class h1c (+/- 2000v) ?? aec-q101-001 charged device model class c5 (+/- 2000v) ?? aec-q101-005 qualification level automotive (per aec-q101) comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level.
www.irf.com ? 2013 international rectifier april 30, 2013 12 AUIRFB8405 important notice unless specifically designated for the automotive market, international rectifier corporation and its subsidiaries (ir) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. part numbers designated with the ?au? prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. all products are sold subject to ir?s terms and conditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with ir?s standard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using ir components. to minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this information with alterati ons is an unfair and deceptive business practice. ir is not responsible or liable for such altered documentation. information of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or serv ice voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business practice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indemnify and hold international rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that ir was negligent regarding the design or manufacture of the product. only products certified as military grade by the defense logistics agency (dla) of the us department of defense, are designed and manufactured to meet dla military specifications required by certain military, aerospace or other applications. buyers acknowledge and agree that any use of ir products not certified by dla as military-grade, in applications requiring military gr ade products, is solely at the buyer?s own risk and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. ir products are neither designed nor intended for use in automotive applications or environments unless the specific ir product s are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designation ?au?. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements. for technical support, please contact ir?s technical assistance center http://www.irf.com/technical-info/ world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 tel: (310) 252-7105

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